K4213A-ZK-E2-AY Просмотр технического описания (PDF) - Renesas Electronics

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Компоненты Описание

производитель

K4213A-ZK-E2-AY

SWITCHING N-CHANNEL POWER MOS FET

Renesas Electronics 

PACKAGE DRAWINGS (Unit: mm)

TO-252 (MP-3ZK)

6.5±0.2

5.1 TYP.

4.3 MIN.

4

2.3±0.1

0.5±0.1

No Plating

2SK4213A

123

1.14 MAX.

2.3 2.3

No Plating

0.76±0.12

0 to 0.25

0.5±0.1

1.0

1. Gate

2. Drain

3. Source

4. Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the

device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly

dissipate it once, when it has occurred.

6

Data Sheet D20286EJ1V0DS

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