2SK4213A-ZK-E2-AY Просмотр технического описания (PDF) - Renesas Electronics
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2SK4213A-ZK-E2-AY Datasheet PDF : 9 Pages
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2SK4213A
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
TA = −55°C
25°C
75°C
10
150°C
1
0.1
0.1
Pulsed
VDS = 5 V
1
10
100
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
15
Pulsed
ID = 30 A
10
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
15
Pulsed
10
VGS = 4.5 V
5
10 V
0
0.1
1
10
100
ID - Drain Current - A
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
15
Pulsed
10
VGS = 4.5 V
ID = 20 A
5
10 V, 30 A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
CAPACITANCE vs. DRAIN TOSOURCE VOLTAGE
10000
Ciss
1000
VGS = 0 V
f = 1MHz
100
0.1
1
Coss
Crss
10
100
VDS - Drain to Source Voltage - V
0
-75
-25
25
75 125 175
Tch - Channel Temperature - °C
DYNAMIC INPUT CHARACTERISTICS
12
10
VDD = 24 V
8
15 V
6V
6
4
2
ID = 30 A
0
0 5 10 15 20 25 30 35 40
QG - Gate Charge - nC
4
Data Sheet D20286EJ1V0DS
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