K4213A-ZK-E1-AY Просмотр технического описания (PDF) - Renesas Electronics

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K4213A-ZK-E1-AY

SWITCHING N-CHANNEL POWER MOS FET

Renesas Electronics 

2SK4213A

ELECTRICAL CHARACTERISTICS (TA = 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Gate Leakage Current

Gate to Source Threshold Voltage

Forward Transfer Admittance Note

Drain to Source On-state Resistance Note

IGSS

VGS(th)

| yfs |

RDS(on)1

VGS = ±16 V, VDS = 0 V

VDS = VGS, ID = 250 μA

VDS = 5 V, ID = 16 A

VGS = 10 V, ID = 30 A

RDS(on)2

VGS = 4.5 V, ID = 20 A

Input Capacitance

Ciss

VDS = 15 V,

Output Capacitance

Coss

VGS = 0 V,

Reverse Transfer Capacitance

Crss

f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 15 V, ID = 30 A,

Rise Time

tr

VGS = 10 V,

Turn-off Delay Time

td(off)

RG = 3 Ω

Fall Time

tf

Total Gate Charge

QG

VDD = 15 V,

Gate to Source Charge

QGS

VGS = 10 V,

Gate to Drain Charge

Body Diode Forward Voltage Note

QGD

VF(S-D)

ID = 30 A

IF = 30 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

Note Pulsed

trr

IF = 30 A, VGS = 0 V,

Qrr

di/dt = 100 A/μs

MIN. TYP. MAX. UNIT

10 μA

±100 nA

1.5

3.0 V

12 24

S

5.3 6.0 mΩ

7.4 9.5 mΩ

1700

pF

240

pF

130

pF

17

ns

17

ns

57

ns

7

ns

34

nC

5

nC

9

nC

0.86 1.5 V

24

ns

15

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

ID

VDD

IAS BVDSS

VDS

Starting Tch

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

RG

PG.

VGS

0

τ

τ = 1 μs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

VGS 90%

90%

10% 10%

tr td(off) tf

ton

toff

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

2

Data Sheet D20286EJ1V0DS

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