2SK4213A-ZK-E2-AY Просмотр технического описания (PDF) - Renesas Electronics
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2SK4213A-ZK-E2-AY Datasheet PDF : 9 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4213A
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK4213A is N-channel MOS FET device that features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
• Low on-state resistance
RDS(on)1 = 6.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.5 mΩ MAX. (VGS = 4.5 V, ID = 20 A)
• Low total gate charge
QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
• 4.5 V drive available
• Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
2SK4213A-ZK-E1-AY Note
2SK4213A-ZK-E2-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tape 2500 p/reel
Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE
TO-252 (MP-3ZK) typ. 0.27 g
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
30
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±64
A
±175
A
Total Power Dissipation (TC = 25°C)
PT1
45
W
Total Power Dissipation (TA = 25°C)
PT2
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
−55 to +150 °C
IAS
20
A
EAS
40
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 0.1 mH
(TO-252)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the
latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
Document No. D20286EJ1V0DS00 (1st edition)
Date Published March 2010 NS
Printed in Japan
2010
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