PTVS10VP1UP Просмотр технического описания (PDF) - NXP Semiconductors.
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PTVS10VP1UP Datasheet PDF : 12 Pages
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NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
PPPM
rated peak pulse power
[1] -
IPPM
rated peak pulse current
[1] -
IFSM
Non-repetitive peak
single half-sine
-
forward current
wave; tp = 8.3 ms
Tj
junction temperature
-
Tamb
ambient temperature
−55
Tstg
storage temperature
−65
[1] In accordance with IEC 61643-321 (10/1000 μs current waveform).
Max
Unit
600
W
see
Table 9
and 10
100
A
150
°C
+150
°C
+150
°C
Table 6. ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
VESD
electrostatic discharge voltage
Conditions
IEC 61000-4-2
(contact discharge)
Min
[1][2] -
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
[2] Soldering point of cathode tab.
Max Unit
30 kV
Table 7. ESD standards compliance
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
Conditions
> 15 kV (air); > 8 kV (contact)
> 4 kV
6. Thermal characteristics
PTVSXP1UP_SER
Product data sheet
Table 8.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Rth(j-sp)
thermal resistance from
junction to solder point
Min Typ Max Unit
[1] -
-
200 K/W
[2] -
-
120 K/W
[3] -
-
60 K/W
[4] -
-
12 K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Soldering point of cathode tab.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
© NXP B.V. 2011. All rights reserved.
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