P4C168L Просмотр технического описания (PDF) - Semiconductor Corporation
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P4C168L Datasheet PDF : 14 Pages
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DATA RETENTION CHARACTERISTICS (P4C168L only)
Sym
Parameter
Test Condition
VDR
ICCDR
VCC for Data Retention
Data Retention Current (Military)
Data Retention Current (Commercial)
tCDR Chip Deselect to Data Retention Time
tR† Operation Recovery Time
DATA RETENTION WAVEFORM
CE ≥ VCC - 0.2V,
VIN ≥ VCC - 0.2V,
or VIN ≤ 0.2V
P4C168/P4C168L, P4C169, P4C170
Typ. *
Min
VCC=
Max
VCC=
2.0V 3.0V 2.0V 3.0V Unit
2.0
V
2
3 200 300 µA
0.5 1.0 20 30 µA
0
ns
tRC§
ns
AC CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(4)
Sym Parameter
-12
-15
-20
-25
-35
Unit
Min Max Min Max Min Max Min Max Min Max
tRC Read Cycle Time
12
15
20
25
35
ns
tAA Address Access Time
12
15
20
25
35 ns
tAC§ Chip Enable Access Time
12
15
20
25
35 ns
tAC‡ Chip Select Access Time
8
9
12
15
20 ns
tOH Output Hold from Address Change
2
2
2
2
2
ns
tLZ‡ Chip Enable to Output in Low Z
2
2
2
2
2
ns
tHZ† Chip Disable to Output in High Z
7
8
9
10
15 ns
tOE† Output Enable to Data Valid
8
10
12
15
15 ns
t†
OLZ
Output Enable to Output in Low Z
0
0
0
0
0
ns
t†
OHZ
Output Disable to Output in High Z
6
7
9
11
15 ns
tRCS Read Command Setup Time
0
0
0
0
0
ns
tRCH Read Command Hold Time
0
0
0
0
0
ns
tPU§ Chip Enable to Power Up Time
0
0
0
0
0
ns
tPD§ Chip Disable to Power Down Time
12
15
20
25
35 ns
Notes:
4. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
Document # SRAM107 REV E
Page 3 of 14
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