BCR400W Просмотр технического описания (PDF) - Infineon Technologies
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BCR400W Datasheet PDF : 9 Pages
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Total power dissipation Ptot = f (TS)
BCR400W
400
Note that up to TS=115°C
mW
it is not possible to exceed Ptot
respecting the maximum
300
ratings of VS and IContr.
The collector or drain
250
current (respectively) of
the stabilized RF transistor
200
does not affect BCR 400
directly, as it provides just the
150
base current.
100
50
00 20 40 60 80 100 120 °C 150
TS
Typical application for GaAs FET
with active bias controller
RF IN
RF OUT
100 k Ω
100 k Ω
- VG
BCR 400
1
4
2
R ext
3
1 nF
+VS
100 pF
EHA07190
5
2007-05-29
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