2SK1931 Просмотр технического описания (PDF) - Shindengen

Номер в каталоге

Компоненты Описание

Список матч

2SK1931

VR Series Power MOSFET

Shindengen 

VR Series Power MOSFET

2SK1931 ( F5E20 )

●Electrical Characteristics Tc = 25℃

Item

Symbol

Conditions

Drain-Source Breakdown Voltage

V(BR)DSS ID = 1mA, VGS = 0V

Zero Gate Voltage Drain Current

IDSS VDS = 200V, VGS = 0V

Gate-Source Leakage Current

IGSS VGS = ±30V, VDS = 0V

Forward Tranｓconductance

gfs ID = 2.5A, VDS = 10V

Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 2.5A, VGS = 10V

Gate Threshold Voltage

VTH ID = 1mA, VDS = 10V

Source-Drain Diode Forward Voltage

VSD IS = 2.5A, VGS = 0V

Thermal Resistance

θjc junction to case

Total Gate Charge

Qg VGS = 10V, ID = 5A, VDD = 150V

Input Capacitance

Ciss

Reverse Transfer Capacitance

Crss VDS = 10V, VGS = 0V, f = 1MHZ

Output Capacitance

Coss

Turn-On Time

ton ID = 2.5A, VGS = 10V, RL = 40Ω

Turn-Off Time

toff

Min. Typ. Max. Unit

200

V

250 μA

±0.1

0.9 1.8

S

0.45 0.65 Ω

234 V

1.5

6.25 ℃/Ｗ

11

nC

360

45

pF

190

55 110 ns

75 150

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

Share Link: