T4700 Просмотр технического описания (PDF) - New Jersey Semiconductor

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T4700

15-Ampere Silicon Triacs

New Jersey Semiconductor 

T4700 Series

ELECTRICAL CHARACTERISTICS

At Maximum Ratings and at Indicated Case Temperature (Tc) Unless Otherwise Specllled

CHARACTERISTIC

SYMBOL

Peak Otf-State Current*

Gala open, Tj = 125"C, VDROM = Max. rated value

Instantaneous On-State Voltage*

For ir = 30A (peak), Tc 25°C

DC Holding Current*

Gate open, Initial principal current = 150 mA (DC), VD = 12V:

Tc = 25°C

For other case temperatures

Critical Rate of Applied Commutating Voltage*

For V0 = VonoM, IT(F1MS) = 15 A, commutating

di/dt = 8 A/ms. and gate unenergized

At Tc = +95° C

Critical Rate of Rise of Off-State Voltage*

For VD = VOBOM, exponential voltage rise, and gate open

AtTG = 125eC

T4700B

T4700D

T4700M

T4700N

DC Gate-Trigger Current* •

For vD = 6 volts (dc), RL = 12 ohms,

Tc = +25°, and Specified Triggering Mode:

I* Mode:

VT2 is positive, VG is positive

I" Mode:

VT2 is positive, VG is negative

lll+ Mode:

VT2 is negative, VG is positive

Ill- Mode:

VT2 is negative, VG is negative

For other case temperatures

dv/dt

dv/dt

IGT

DC Gate-Trigger Voltage* *

Forv0 = 6 volts (dc) and RL = 12 ohms

At Tc = +25"

For other case temperatures

VOT

Forv0 = VPROM, RL=125n. Tc = 12S°C

Gate-Controlled Turn-On Time

(Delay Time + Rise Time)

For VD = VOROU, I0 = 160 mA, tr = 0.1 fa,

IT = 25 A (peak), Tc = 25°C

Thermal Resistance:

Junction-to-Case

•For either polarity of main terminal 2 voltage (VI2) with reference to main terminal 1.

•For either polarity of gate voltage (V0) with reference to main terminal 1.

LIMITS

For AM Types

Unless Otherwise Specllled

Min.

Typ.

Max.

0.2

1.6

2.0

15

60

See Fig. 5

10

30

150

20

100

15

75

10

50

15

30

35

80

35

80

15

30

See Figs. 7 & 9

2.5

See Fig. 11

0.2

1.6

2.5

1.3

UNITS

mA

mA

V//is

mA

°C/W

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