P5506HVG Просмотр технического описания (PDF) - Niko Semiconductor

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P5506HVG

Dual N-Channel Enhancement Mode Field Effect Transistor SOP-8 Lead-Free

Niko Semiconductor 

NIKO-SEM

Dual N-Channel Enhancement Mode

Field Effect Transistor

P5506HVG

SOP-8

Lead-Free

On-State Drain Current1

ID(ON)

Drain-Source

Resistance1

On-State

Forward Transconductance1

RDS(ON)

gfs

VDS = 5V, VGS = 10V

VGS = 4.5V, ID = 4A

VGS = 10V, ID = 4.5A

VDS = 10V, ID = 4.5A

20

A

55 75

mΩ

42 55

14

S

DYNAMIC

Input Capacitance

Ciss

650

Output Capacitance

Coss

VGS = 0V, VDS = 25V, f = 1MHz

80

pF

Reverse Transfer Capacitance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VDS = 0.5V(BR)DSS, VGS = 10V,

ID = 4.5A

VDD = 30V

ID ≅ 1A, VGS = 10V, RGEN = 6Ω

35

12.5 18

2.4

nC

2.6

11 20

8 18 nS

19 35

6 15

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

IS

Pulsed Current3

ISM

Forward Voltage1

VSD

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

IF = IS A, VGS = 0V

1.3

2.6 A

1V

REMARK: THE PRODUCT MARKED WITH “P5506HVG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

2

AUG-19-2004

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