K6R4004C1D Просмотр технического описания (PDF) - Samsung
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K6R4004C1D Datasheet PDF : 9 Pages
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K6R4004C1D
PRELIMINARY
CMOS SRAM
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
Address
OE
CS
WE
Data in
Data out
tWC
tAW
tCW(3)
tWR(5)
tAS(4)
tWP(2)
High-Z
tOHZ(6)
tDW
tDH
Valid Data
High-Z(8)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
WE
Data in
Data out
tAS(4)
High-Z
tWC
tAW
tCW(3)
tWP1(2)
tWR(5)
tWHZ(6)
tDW
tDH
Valid Data
High-Z(8)
tOW
(10)
(9)
TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)
Address
CS
WE
Data in
Data out
tAS(4)
High-Z
tLZ
High-Z
tWC
tAW
tCW(3)
tWP(2)
tWR(5)
tWHZ(6)
tDW
tDH
Valid Data
High-Z
High-Z(8)
-7-
Rev. 2.0
July 2004
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