SKW15N60 Просмотр технического описания (PDF) - Infineon Technologies

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SKW15N60

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKP15N60, SKB15N60

SKW15N60

30A

2.0V

25A

20A

150°C

15A

100°C

10A

25°C

5A

-55°C

0A

0.0V

0.5V

1.0V

1.5V

2.0V

VF, FORWARD VOLTAGE

Figure 25. Typical diode forward current as

a function of forward voltage

1.5V

I F = 30A

I F = 15A

1.0V

-40°C 0°C 40°C 80°C 120°C

Tj, JUNCTION TEMPERATURE

Figure 26. Typical diode forward voltage as

a function of junction temperature

100K/W D=0.5

0.2

0.1

0.05

10-1K/W

0.02

0.01

R,(1/W)

0.311

0.271

0.221

0.584

0.314

τ, (s)=

7.83*10-2

1.21*10-2

1.36*10-3

1.53*10-4

2.50*10-5

R1

R2

single pulse

C1=τ1/R1 C2=τ2/R2

10-2K/W

1µs 10µs 100µs 1ms 10ms 100ms 1s

tp, PULSE WIDTH

Figure 27. Diode transient thermal

impedance as a function of pulse width

(D = tp / T)

10

Jul-02

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