SKP15N60(2008) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге

Компоненты Описание

Список матч

SKP15N60
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

500ns

400ns

300ns

200ns

IF = 30A

IF = 7.5A

IF = 15A

100ns

0ns

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

20A

16A

IF = 30A

12A

IF = 15A

IF = 7.5A

8A

4A

0A

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

2000nC

1500nC

1000nC

500nC

SKP15N60

SKW15N60

IF = 30A

IF = 15A

IF = 7.5A

0nC

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

1000A/µs

800A/µs

600A/µs

400A/µs

200A/µs

0 A /µs

100A/µs 300A/µs 500A/µs 700A/µs 900A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 200V, Tj = 125°C,

Dynamic test circuit in Figure E)

9

Rev. 2.3 Sep 08

Share Link: