IXTQ60N20T Просмотр технического описания (PDF) - IXYS CORPORATION
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IXTQ60N20T Datasheet PDF : 4 Pages
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Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
RthCS
TO-220
TO-3P
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 60A, VGS = 0V, Note 1
trr
IF = 0.5 • ID25, VGS = 0V
IRM
-di/dt = 100A/μs
QRM
VR = 85V
Characteristic Values
Min. Typ. Max.
IXTA60N20T IXTP60N20T
IXTQ60N20T
TO-220 (IXTP) Outline
40
62
S
4530
pF
490
pF
72
pF
22
ns
13
ns
33
ns
22
ns
73
nC
Pins: 1 - Gate
2 - Drain
22
nC
3 - Source
22
nC
0.50
0.25
0.30 °C/W
°C/W
°C/W
Characteristic Values
Min. Typ. Max.
60 A
240 A
1.3 V
118
ns
9.3
A
550
nC
TO-3P (IXTQ) Outline
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 (IXTA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
Millimeter
Min. Max.
4.06 4.83
0.51 0.99
1.14 1.40
0.40 0.74
1.14 1.40
8.64 9.65
8.00 8.89
9.65 10.41
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
Inches
Min. Max.
.160
.020
.045
.190
.039
.055
.016 .029
.045 .055
.340 .380
.280 .320
.380 .405
.270
.100
.575
.090
.040
.050
0
.320
BSC
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
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