2SK3378 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SK3378 Datasheet PDF : 5 Pages
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2SK3378
Silicon N Channel MOS FET
High Speed Switching
Features
• Low on-resistance
RDS =2.7 Ω typ. (VGS = 10 V , ID = 50 mA)
RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Outline
CMPAK
3
D
G
S
ADE-208-805 (Z)
1st.Edition.
June 1999
1
2
1. Source
2. Gate
3. Drain
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