IRFZ44N Просмотр технического описания (PDF) - Tiger Electronic
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IRFZ44N Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
N-Channel Power MOSFET
Product specification
IRFZ44N
DESCRIPTION
Process has specifically been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary switch in advanced
highefficiency, high-frequency isolated DC-DC converters for Telecom and
Computer applications. It is also intended for any applications with low gate
drive requirements.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l
Value Unit
Drain-Source Voltage
VDSS
55
V
Drain Current - Continuous
Drain Current - Pulsed
Gate-Source Voltage
Power Dissipation
Max. Operating Junction Temperature
Storage Temperature
ID
IDM
VGSS
PD
Tj
Tstg
49
A
160 A
±20 V
94 W
150 oC
-55~150 oC
TO-220
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID =250μA
Zero Gate Voltage Drain Current
IDSS VDS =55V, VGS =0V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
IGSSF
IGSSR
VGS(th)
VGS =20V, VDS =0V
VGS = -20V, VDS =0V
VDS = VGS , ID =250μA
Static Drain-Source On-Resistance
RDS(on) VGS = 10 V, ID = 25 A
Drain-Source Diode Forward Voltage
VSD VGS = 0 V, IS = 25 A
Min.
55
—
—
—
2.0
—
—
Typ.
—
—
—
—
3.0
—
—
Max. Unit
—
V
10 uA
100 nA
-100 nA
4.0 V
0.0175 W
1.3 V
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