2SB649 Просмотр технического описания (PDF) - Weitron Technology

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Компоненты Описание

Список матч

2SB649

PNP Epitaxial Planar Transistors

Weitron Technology 

2SB649/2SB649A

–1.2

IC = 10 IB

–1.0

–0.8

–0.6

Ta = –25°C

25

75

–0.4

–0.2

–0

–1

–10

–100

Collector current IC (mA)

–1,000

Fig.7 Base to Emitter Voltage

vs. Collector Current

240

VCE = –5 V

200

160

120

80

40

0

–10

–30

–100 –300 –1,000

Collector current IC (mA)

Fig.8 Gain Bandwidth Product

vs. Collector Current

200 f = 1 MHz

100 IE = 0

50

20

10

5

2

–1

–3

–10

–30

–100

Collector to base voltage VCB (V)

Fig.9 Collector Output Capacitance

vs. Collector to Base Voltage

WEITRON

4/5

http://www.weitron.com.tw

21-Mar-06

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