2N5672 Просмотр технического описания (PDF) - Comset Semiconductors
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2N5672 Datasheet PDF : 3 Pages
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NPN 2N5671 – 2N5672
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS)
VCER(SUS)
RBE=50Ω
VCEX(SUS)
Ratings
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
Collector-Emitter
Sustaining Voltage (1)
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE
VCE(SAT)
VBE(SAT)
DC Current Gain (1)
Collector-Emitter
saturation Voltage (1)
Base-Emitter saturation
Voltage (1)
Test Condition(s)
Min Typ Mx
IC=200 mA, IB=0
IC=0.2 A , RBE=50Ω
2N5671 90 - -
2N5672 120 - -
2N5671 110 - -
2N5672 140 - -
2N5671 120 - -
IC=0.2 A , VBE=-1.5V , RBE=50Ω 2N5672 150 -
-
VCE=80 V
2N5671
2N5672
-
- 10
VCE=110 V, VEB=-1.5 V,
VCE=135 V, VEB=-1.5 V,
VCE=100 V, VEB=-1.5 V,
TC=150°C
2N5671 -
2N5672
2N5671 -
2N5672 -
- 12
10
- 15
- 10
VBE=7.0 V, IC=0
2N5671
2N5672
-
- 10
IC=15 A, VCE=2.0 V
2N5671
2N5672
20
- 100
IC=20 A, VCE=5.0 V
2N5671
2N5672
20
-
-
IC=15 A, IB=1.2 A
2N5671
-
2N5672
- 0.75
IC=15 A, IB=1.2 A
2N5671
-
2N5672
- 1.5
Unit
V
V
V
mA
mA
mA
-
V
Symbol
VBE
fT
Is/b
Es/b
ton
ts
tf
CBO
Ratings
Test Condition(s)
Min Typ Mx
Base-Emitter Voltage (1)
IC=15 A, VCE=5.0 V
2N5671
2N5672
-
- 1.6
Transition frequency
VCE=10 V, IC=2 A,
2N5671
2N5672
50
-
-
Second Breakdown energy VCE=24 V
2N5671 5.8 - -
(2)
VCE=45 V
2N5672 0.9 - -
Second Breakdown energy
VBE=-4 V, RBE=20Ω ,L=180µH
2N5671
2N5672
20
-
-
Turn-on time
2N5671
2N5672
-
- 0.5
Storage time
IC=15 A , VCC=30 V
IB1 = -IB2 =1.2 A
2N5671
2N5672
-
- 1.5
File time
2N5671
2N5672
-
- 0.5
Collector-Base Capacitance IE= 0 , VCB= 10 V , f = 1MHz
2N5671
2N5672
-
- 900
Unit
V
MHz
A
mJ
µs
pF
(1) Pulse Width ≈ 300 µs, Duty Cycle =1.5%
(2) Pulsed : 1 s, non repetitive pulse
COMSET SEMICONDUCTORS
2/3
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