K5A60D Просмотр технического описания (PDF) - Toshiba
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K5A60D Datasheet PDF : 6 Pages
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Electrical Characteristics (Ta = 25°C)
TK5A60D
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Rise time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
IGSS
IDSS
V (BR) DSS
Vth
RDS (ON)
⎪Yfs⎪
Ciss
Crss
Coss
VGS = ±30 V, VDS = 0 V
VDS = 600 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
VDS = 10 V, ID = 1 mA
VGS = 10 V, ID = 2.5 A
VDS = 10 V, ID = 2.5 A
VDS = 25 V, VGS = 0 V, f = 1 MHz
tr
10 V
VGS
ID = 2.5 A VOUT
0V
ton
50 Ω
RL =
80 Ω
tf
VDD ≈ 200 V
toff
Duty ≤ 1%, tw = 10 µs
Qg
Qgs
VDD ≈ 400 V, VGS = 10 V, ID = 5 A
Qgd
Min Typ. Max Unit
⎯
⎯
±1
µA
⎯
⎯
10
µA
600 ⎯
⎯
V
2.4
⎯
4.4
V
⎯
1.2 1.43 Ω
0.8 3.0
⎯
S
⎯ 700 ⎯
⎯
4
⎯
pF
⎯
80
⎯
⎯
20
⎯
⎯
40
⎯
ns
⎯
11
⎯
⎯
60
⎯
⎯
16
⎯
⎯
10
⎯
nC
⎯
6
⎯
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
⎯
⎯
IDR = 5 A, VGS = 0 V
IDR = 5 A, VGS = 0 V,
dIDR/dt = 100 A/µs
Min Typ. Max Unit
⎯
⎯
5
A
⎯
⎯
20
A
⎯
⎯
−1.7
V
⎯ 1200 ⎯
ns
⎯
7.2
⎯
µC
Marking
K5A60D
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Part No.
(or abbreviation code)
Lot No.
Note 4
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment.
2
2010-02-26
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