3310GH Просмотр технического описания (PDF) - Advanced Power Electronics Corp
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3310GH Datasheet PDF : 6 Pages
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20
T C =25 o C
16
12
8
4
-5.0V
-4.5V
-3.5V
-2.5V
V G = -2.0V
0
0
1
2
3
4
5
6
7
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
280
I D =-2A
T C =25 o C
240
200
160
120
80
0
2
4
6
8
10
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
3
T j =150 o C
T j =25 o C
2
1
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP3310GH/J
20
T C =150 o C
16
12
8
4
65mΩ
-5.0V
-4.5V
-3.5V
-2.5V
V G = -2.0V
0
0
1
2
3
4
5
6
7
8
-V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.6
I D = -2.8A
V GS = -4.5V
1.4
1.2
1
0.8
0.6
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
1.2
1
0.8
0.6
2.01E+08
0.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
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