FSYE913A0R Просмотр технического описания (PDF) - Intersil

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FSYE913A0R

P-Channel Power MOSFETs

Intersil 

FSYE913A0D, FSYE913A0R

Source to Drain Diode Specifications

PARAMETER

Forward Voltage

Reverse Recovery Time

SYMBOL

VSD

trr

TEST CONDITIONS

ISD = 9A

ISD = 9A, dISD/dt = 100A/µs

MIN

TYP

MAX

UNITS

-0.6

-

-1.8

V

-

-

170

ns

Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Drain to Source Breakdown Volts

Gate to Source Threshold Volts

Gate to Body Leakage

Zero Gate Leakage

Drain to Source On-State Volts

Drain to Source On Resistance

NOTES:

(Note 3)

(Note 3)

(Notes 2, 3)

(Note 3)

(Notes 1, 3)

(Notes 1, 3)

BVDSS

VGS(TH)

IGSS

IDSS

VDS(ON)

rDS(ON)12

VGS = 0, ID = 1mA

VGS = VDS, ID = 1mA

VGS = ±20V, VDS = 0V

VGS = 0, VDS = -80V

VGS = -12V, ID = 9A

VGS = -12V, ID = 5A

-100

-2.0

-

-

-

-

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

MAX

-

-6.0

100

25

-3.02

0.280

UNITS

V

V

nA

µA

V

Ω

Single Event Effects (SEB, SEGR) Note 4

TEST

Single Event Effects Safe Operating Area

SYMBOL

SEESOA

ENVIRONMENT (NOTE 5)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (µ)

Ni

26

43

Br

37

36

Br

37

36

Br

37

36

APPLIED

VGS BIAS

(V)

20

10

15

20

(NOTE 6)

MAXIMUM

VDS BIAS (V)

-100

-100

-80

-50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves Unless Otherwise Specified

-120

LET = 26MeV/mg/cm2, RANGE = 43µ

LET = 37MeV/mg/cm2, RANGE = 36µ

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

-100

-80

-60

-40

-20

TEMP = 25oC

0

0

5

10

15

20

25

VGS (V)

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

1E-3

1E-4

1E-5

1E-6

ILM = 10A

30A

100A

300A

1E-7

-10

-30

-100

-300

DRAIN SUPPLY (V)

-1000

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

3

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