IRF9520 Просмотр технического описания (PDF) - Fairchild Semiconductor

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IRF9520

6A, 100V, 0.600 Ohm, P-Channel Power MOSFET

Fairchild Semiconductor 

Data Sheet

January 2002

IRF9520

6A, 100V, 0.600 Ohm, P-Channel Power

MOSFET

This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

P-Channel enhancement mode silicon gate power field effect

transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. These types

can be operated directly from integrated circuits.

Formerly developmental type TA17501.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF9520

TO-220AB

IRF9520

NOTE: When ordering, use the entire part number.

Features

• 6A, 100V

• rDS(ON) = 0.600Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

Symbol

D

G

S

Packaging

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

©2002 Fairchild Semiconductor Corporation

IRF9520 Rev. B

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