SSD14N25-280D Просмотр технического описания (PDF) - Secos Corporation.
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SSD14N25-280D Datasheet PDF : 4 Pages
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Elektronische Bauelemente
SSD14N25-280D
10.9A , 250V , RDS(ON) 280mΩ
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Static
Gate-Threshold Voltage
VGS(th)
1.0
-
-
V
Gate-Body Leakage
IGSS
-
-
±100
nA
Zero Gate Voltage Drain Current
On-State Drain Current 1
IDSS
ID(on)
-
-
1
µA
-
-
25
14
-
-
A
Drain-Source On-Resistance 1
Forward Transconductance 1
-
-
280
RDS(ON)
mΩ
-
-
340
gfs
-
4
-
S
Diode Forward Voltage
VSD
-
0.95
-
V
Dynamic 2
Total Gate Charge
Gate-Source Charge
Qg
-
16
-
Qgs
-
7.1
-
nC
Gate-Drain Charge
Qgd
-
6.8
-
Turn-on Delay Time
Td(on)
-
22
-
Rise Time
Turn-off Delay Time
Tr
Td(off)
-
25
-
nS
-
55
-
Fall Time
Input Capacitance
Output Capacitance
Tf
-
43
-
Ciss
-
1691
-
Coss
-
117
-
pF
Reverse Transfer Capacitance
Crss
-
65
-
Notes:
1. Pulse test：Pulse width≦300 µs, duty cycle≦2％.
2. Guaranteed by design, not subject to production testing.
Teat Conditions
VDS=VGS, ID =250µA
VDS=0, VGS=±20V
VDS=200V, VGS=0
VDS=200V, VGS=0, TJ=55°C
VDS=5V, VGS=10V
VGS=10V, ID=3A
VGS=5.5V, ID=2.4A
VDS=15V, ID=3A
IS=23.1A, VGS=0
VDS=120V
VGS=5.5V
ID=3A
VDS=120V
ID=3A
VGEN=10V
RL=40Ω
RGEN=6Ω
VGS =0
VDS=15 V
f =1.0MHz
http://www.SeCoSGmbH.com/
21-Mar-2013 Rev. A
Any changes of specification will not be informed individually.
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