P62NS04Z Просмотр технического описания (PDF) - STMicroelectronics

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P62NS04Z

N-channel clamped 12.5mΩ- 62A - TO-220 Fully protected MESH OVERLAY™ Power MOSFET

STMicroelectronics 

STP62NS04Z

Electrical characteristics

Table 6. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 62A, VGS = 0

ISD = 40A,

di/dt = 100A/µs,

VDD = 20V, TJ = 150°C

Figure 15 on page 8

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min Typ. Max Unit

62 A

248 A

1.5 V

45

ns

65

µC

2.9

A

5/12

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