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D78F9189CT Просмотр технического описания (PDF) - NEC => Renesas Technology

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D78F9189CT Datasheet PDF : 247 Pages
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FLASH MEMORY WRITE/DELETE CHARACTERISTICS (TA = 10 to 40 °C, VDD = 4.0 to 5.5 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Write current
Note
(VDD pin)
Write current
Note
(VPP pin)
Delete current
Note
(VDD pin)
Delete current
Note
(VPP pin)
Unit delete time
Total delete time
Write count
VPP supply voltage
IDDW
When VPP supply voltage = VPP1
(5.0-MHz crystal oscillation operation mode)
IPPW
When VPP supply voltage = VPP1
IDDE
When VPP supply voltage = VPP1
(5.0-MHz crystal oscillation operation mode)
IPPE
When VPP supply voltage = VPP1
ter
0.5
tera
Delete/write are regarded as 1 cycle
VPP0
In normal operation
0
VPP1
During flash memory programming
9.7
18
7.5
18
100
1
10.0
1
20
20
0.2VDD
10.3
Unit
mA
mA
mA
mA
s
s
Times
V
V
Note The current flowing to the ports (including the current flowing through an on-chip pull-up resistor) and AVDD
current are not included.
Data Memory Stop Mode Low Power Supply Voltage Data Retention Characteristics (TA = 40 to +85 °C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention power
supply voltage
VDDDR
4.0
5.5
V
Release signal set time
Oscillation stabilization
wait timeNote 1
tSREL
tWAIT
Release by RESET
Release by interrupt request
0
µs
215/fX
s
Note 2
s
Notes 1.
2.
The oscillation stabilization time is the time the CPU operation is stopped to prevent unstable
operation when oscillation starts.
By using bits 0 to 2 (OSTS0 to OSTS2) of the oscillation stabilization time selection register (OSTS),
212/fX, 215/fX, or 217/fX can be selected.
Remark fX: Main system clock oscillation frequency
234
User’s Manual 2nd edition

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