10N03LA(2004) Просмотр технического описания (PDF) - Infineon Technologies
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10N03LA Datasheet PDF : 11 Pages
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Parameter
Symbol Conditions
IPD10N03LA IPF10N03LA
IPS10N03LA IPU10N03LA
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=15 V,
-
Crss
f =1 MHz
-
t d(on)
-
tr
V DD=15 V, V GS=10 V,
-
t d(off)
I D=15 A, R G=2.7 Ω
-
tf
-
Gate Charge Characteristics+A406)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Q gs
-
Q g(th)
-
Q gd
V DD=15 V, I D=15 A,
-
Q sw
V GS=0 to 5 V
-
Qg
-
V plateau
-
Gate charge total, sync. FET
Q g(sync)
V DS=0.1 V,
V GS=0 to 5 V
-
Output charge
Q oss
V DD=15 V, V GS=0 V
-
1021
393
52
6.3
4.8
18
2.8
1358 pF
522
78
9.4 ns
7.2
27
4.2
3.4
4.5 nC
1.6
2.2
2.3
3.5
4.1
5.8
8.2
11
3.3
-V
7.2
9.6 nC
8.5
11
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=30 A,
T j=25 °C
Q rr
V R=15 V, I F=I S,
di F/dt =400 A/µs
-
-
30 A
-
-
210
-
0.93
1.2 V
-
-
10 nC
6) See figure 16 for gate charge parameter definition
Rev. 1.3
page 3
2004-05-19
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