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BAT46WH,115 Просмотр технического описания (PDF) - NXP Semiconductors.

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BAT46WH,115
NXP
NXP Semiconductors. NXP
BAT46WH,115 Datasheet PDF : 12 Pages
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NXP Semiconductors
BAT46WH
Single Schottky barrier diode
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BAT46WH
-
plastic surface-mounted package; 2 leads
Version
SOD123F
4. Marking
Table 4. Marking codes
Type number
BAT46WH
Marking code
DB
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VR
reverse voltage
-
IF
forward current
-
IFSM
non-repetitive peak
square wave;
[1] -
forward current
tp < 10 ms
Ptot
total power dissipation Tamb 25 C
[2][4] -
[3][4] -
Tj
junction temperature
-
Tamb
ambient temperature
55
Tstg
storage temperature
65
Max Unit
100
V
250
mA
2.5
A
440
mW
780
mW
150
C
+150 C
+150 C
[1] Tj = 25 C before surge.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[4] Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min Typ Max Unit
[1][3] -
-
285 K/W
[2][3] -
-
160 K/W
BAT46WH
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 November 2011
© NXP B.V. 2011. All rights reserved.
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