SIA913ADJ Просмотр технического описания (PDF) - Vishay Semiconductors

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Компоненты Описание

производитель

SIA913ADJ

Dual P-Channel 12-V (D-S) MOSFET

Vishay Semiconductors 

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

12

8

10

6

8

6

4

Package Limited

4

2

2

0

0

0

25

50

75

100 125 150

25

TC - Case Temperature (°C)

Current Derating*

SiA913ADJ

Vishay Siliconix

50

75

100

125

150

TC - Case Temperature (°C)

Power Derating

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Document Number: 64723

S09-0141-Rev. A, 02-Feb-09

www.vishay.com

5

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