13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
100
25 °C
100 °C
125 °C
10
IPB108N15N3 G IPP111N15N3 G
IPI111N15N3 G
14 Typ. gate charge
V GS=f(Q gate); I D=83 A pulsed
parameter: V DD
10
120 V
8
75 V
30 V
6
4
2
1
1
10
100
tAV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
1000
0
0
10
20
30
40
50
Qgate [nC]
16 Gate charge waveforms
170
V GS
165
160
155
150
V gs(th)
145
140
135
-60 -20
20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev. 2.2
page 7
Qg
Q sw
Q gd
Q gate
2017-02-23