108N15N Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
108N15N Datasheet PDF : 11 Pages
| |||
9 Drain-source on-state resistance
R DS(on)=f(T j); I D=83 A; V GS=10 V
35
IPB108N15N3 G IPP111N15N3 G
IPI111N15N3 G
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
parameter: I D
4
30
25
20
15
98%
typ
10
5
3.5
1600 µA
3
160 µA
2.5
2
1.5
1
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20
20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104
Ciss
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103
Coss
102
101
Crss
102
175 °C
25°C, 98%
175°C, 98%
101
25 °C
0
Rev. 2.2
20
40
60
80
100
VDS [V]
100
0
page 6
0.5
1
1.5
2
VSD [V]
2017-02-23
Share Link: 