108N15N Просмотр технического описания (PDF) - Infineon Technologies
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Компоненты Описание
производитель
108N15N Datasheet PDF : 11 Pages
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Parameter
Symbol Conditions
IPB108N15N3 G IPP111N15N3 G
IPI111N15N3 G
min.
Values
typ.
Unit
max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C iss
-
C oss
V GS=0 V, V DS=75 V,
f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=75 V, V GS=10 V,
-
t d(off)
I D=83 A, R G=1.6 W
-
tf
-
3230
378
7
17
35
32
9
- pF
-
-
- ns
-
-
-
Gate Charge Characteristics4)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Q gs
-
18
- nC
Q gd
-
Q sw
V DD=75 V, I D=83 A,
V GS=0 to 10 V
-
Qg
-
7
-
16
-
41
55
V plateau
-
5.7
-V
Q oss
V DD=75 V, V GS=0 V
-
106
141 nC
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
IS
I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=83 A,
T j=25 °C
t rr
V R=75 V, I F=I S,
Q rr
di F/dt =100 A/µs
-
-
83 A
-
-
332
-
1
1.2 V
-
132
- ns
-
415
- nC
4) See figure 16 for gate charge parameter definition
5) Plotted values correspond to IPP11N15N3 G and IPI111N15N3 G. Corresponding values for
IPB108N15N3 G are 0.3mΩ lower
Rev. 2.2
page 3
2017-02-23
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