W13NK80Z Просмотр технического описания (PDF) - STMicroelectronics

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W13NK80Z

N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET

STMicroelectronics 

Electrical characteristics

STW13NK80Z

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

ISD

ISDM (1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 12A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 12A, di/dt = 100A/µs,

Reverse recovery charge VDD = 100V, Tj = 25°C

Reverse recovery current (see Figure 15)

trr

Qrr

IRRM

Reverse recovery time ISD = 12A, di/dt = 100A/µs,

Reverse recovery charge VDD = 100V, Tj = 150°C

Reverse recovery current (see Figure 15)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Typ.

632

7.2

26

805

10

25

Max. Unit

12

A

48

A

1.6 V

ns

µC

A

ns

µC

A

6/14

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