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NCP5425DBR2G Просмотр технического описания (PDF) - ON Semiconductor

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NCP5425DBR2G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NCP5425DBR2G Datasheet PDF : 22 Pages
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NCP5425
MAXIMUM RATINGS
Rating
Value
Unit
Operating Junction Temperature, TJ
Storage Temperature Range, TJ
ESD Susceptibility (Human Body Model)
150
°C
−65 to 150
°C
2.0
kV
ESD Susceptibility (Machine Model)
200
V
Thermal Resistance, Junction−to−Air
140
°C/W
Moisture Sensitivity Level (MSL)
1
Lead Temperature Soldering: Reflow: (Note 1)
260 peak
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 60 to 150 seconds maximum above 183°C, 260°C peak.
MAXIMUM RATINGS
Pin Symbol
VCC
COMP1, COMP2
VFB1, VFB2, VREF2
ROSC
GATE(H)1, GATE(H)2
GATE(L)1, GATE(L)2
IS+1, IS+2
IS−1, IS−2
GND
BST
MODE
Pin Name
IC Power Input
Compensation Capacitor for
Channel 1 or 2
Voltage Feedback Input for
Channel 1 or 2
Oscillator Resistor
High−Side FET Driver
for Channel 1 or 2
Low−Side FET Driver for
Channel 1 or 2
Positive Current Sense for
Channel 1 or 2
Negative Current Sense for
Channel 1 or 2
Ground
Power Input for GATE(H)1
GATE(H)2
Dual or Single Output Select
VMAX
16 V
4.0 V
6.0 V
5.0 V
20 V
16 V
6.0 V
6.0 V
100 mV
23 V
3.5 V
VMIN
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
−0.3 V
0V
−0.3 V
−0.3 V
ISOURCE
N/A
1.0 mA
ISINK
2.0 A Peak
200 mA DC
1.0 mA
1.0 mA
1.0 mA
1.0 mA
2.0 A Peak
200 mA DC
2.0 A Peak
200 mA DC
1.0 mA
1.0 mA
2.0 A Peak
200 mA DC
2.0 A Peak
200 mA DC
1.0 mA
1.0 mA
1.0 mA
2.0 A Peak
200 mA DC
N/A
N/A
N/A
2.0 A Peak
200 mA DC
N/A
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