VS-VSKC166/04PBF Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-VSKC166/04PBF
Vishay Semiconductors
VS-VSKC166/04PBF Datasheet PDF : 14 Pages
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VS-VSK.166..PbF, VS-VSK.196..PbF, VS-VSK.236..PbF Series
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Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state
current at case temperature
Maximum RMS on-state current
IF(AV)
IF(RMS)
Maximum peak, one-cycle
on-state, non-repetitive
IFSM
surge current
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value on-state
slope resistance
High level value on-state
I2t
VF(TO)1
VF(TO)2
rt1
rt2
Maximum forward voltage drop
VFM
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
180° conduction, half sine wave
165
195
230
100
100
100
260
305
360
t = 10 ms
t = 8.3 ms
No voltage
reapplied
4000
4200
4750
4980
5500
5765
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sine half wave,
initial TJ =
TJ maximum
3350
3500
80
73
4000
4200
113
103
4630
4850
151
138
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
56
80
107
52
73
98
t = 0.1 ms to 10 ms, no voltage reapplied
798
1130 1516
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum
(I > x IF(AV)), TJ maximum
0.73
0.88
0.69
0.78
0.7
0.83
(16.7 % x x IF(AV) < I < x IF(AV)), TJ maximum 1.5
1.3
1.2
(I > x IF(AV)), TJ maximum
IFM = x IF(AV), TJ = 25 °C, 180° conduction
Average power = VF(TO) x IF(AV) + rf x (IF(RMS))2
1.26
1.43
1.2
1.38
1.07
1.46
UNITS
A
°C
A
kA2s
kA2s
V
m
V
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS insulation voltage
SYMBOL
TEST CONDITIONS
VSK.166 VSK.196 VSK.236 UNITS
IRRM
TJ = 150 °C
20
mA
50 Hz, circuit to base, all terminals shorted,
VINS
t=1s
3500
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
VSK.166 VSK.196 VSK.236
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case per junction
Maximum thermal resistance,
case to heatsink per module
TJ, TStg
RthJC DC operation
RthCS Mounting surface smooth, flat and greased
-40 to +150
0.2
0.16
0.14
0.05
Mounting
torque ± 10 %
IAP to heatsink
busbar to IAP
Approximate weight
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of
the compound. Lubricated threads.
4 to 6
200
7.1
Case style
INT-A-PAK
UNITS
°C
K/W
Nm
g
oz.
Revision: 29-Sep-15
2
Document Number: 94357
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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