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P10NK80Z

N-channel 800V - 0.78Ω- 9A - TO-220/FP-TO-247 Zener-protected superMESH MOSFET

STMicroelectronics 

STP10NK80ZFP - STP10NK80Z - STW10NK80Z

1

Electrical ratings

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

VDS

VDGR

VGS

Drain-source voltage (VGS = 0)

Drain-gate voltage (RGS = 20KΩ)

Gate-source voltage

ID

Drain current (continuous) at TC = 25°C

ID

IDM(2)

Drain current (continuous) at TC=100°C

Drain current (pulsed)

PTOT

Total dissipation at TC = 25°C

Derating Factor

Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)

dv/dt(3) Peak diode recovery voltage slope

VISO Insulation withstand voltage (DC)

TJ

Operating junction temperature

Tstg

Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤9A, di/dt ≤200A/µs,VDD ≤V(BR)DSS, Tj ≤TJMAX

Value

Unit

TO-220/ TO-247 TO-220FP

800

800

± 30

9

6

36

160

1.28

4

4.5

--

9(1)

6(1)

36(1)

40

0.32

2500

V

V

V

A

A

A

W

W/°C

KV

V/ns

V

-55 to 150

°C

Table 2. Thermal data

Symbol

Parameter

Rthj-case

Rthj-a

Tl

Thermal resistance junction-case Max

Thermal resistance junction-ambient Max

Maximum lead temperature for soldering

purpose

Value

Unit

TO-220 TO-220FP TO-247

0.78

3.1

62.5

0.78 °C/W

50

°C/W

300

°C

Table 3. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAS

(pulse width limited by Tj Max)

Single pulse avalanche energy

EAS

(starting Tj=25°C, Id=Iar, Vdd=50V)

Value

Unit

9

A

290

mJ

3/15

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