NCP6335FFCT2G Просмотр технического описания (PDF) - ON Semiconductor
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NCP6335FFCT2G Datasheet PDF : 30 Pages
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NCP6335
ELECTRICAL CHARACTERISTICS (Note 9)
Min and Max Limits apply for TA = −40°C to +85°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified.
Typical values are referenced to TA = + 25°C, AVIN = PVIN = 3.6 V and default configuration, unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLY CURRENT: PINS AVIN – PVINx
IQ PWM
Operating quiescent current
PWM
DCDC active in Forced PWM
no load
−
10
20
mA
IQ PFM
Operating quiescent current PFM
DCDC active in Auto mode
no load − minimal switching
−
35
70
mA
ISLEEP
Product sleep mode current
IOFF
Product in off mode
DCDC CONVERTER
EN high, DCDC off or
EN low and (VSEL high or
Sleep_Mode high)
VIN = 2.5 V to 5.5 V
EN, VSEL and Sleep_Mode low
VIN = 2.5 V to 5.5 V
−
7
15
mA
−
0.8
5
mA
PVIN
IOUTMAX
Input Voltage Range
Maximum Output Current
Ipeak[1..0] = 00 (Note 10)
Ipeak[1..0] = 01 (Note 10)
Ipeak[1..0] = 10 (Note 10)
2.3
−
5.5
V
2.5
−
−
3.0
−
−
A
3.5
−
−
Ipeak[1..0] = 11 (Note 10)
4.0
−
−
DVOUT
Output Voltage DC Error
FSW
RONHS
RONLS
IPK
Switching Frequency
P−Channel MOSFET On
Resistance
N−Channel MOSFET On
Resistance
Peak Inductor Current
Forced PWM mode, Vin range,
IOUT from 0 mA and 300 mA
Forced PWM mode, Vin range,
IOUT up to IOUTMAX (Note 10)
Auto mode, Vin range,
IOUT up to IOUTMAX (Note 10)
From PVIN to SW
VIN = 5.0 V
From SW to PGND
VIN = 5.0 V
Open loop – Ipeak[1..0] = 00
Open loop – Ipeak[1..0] = 01
Open loop – Ipeak[1..0] = 10
−1
−
1
−1
−
1
%
−1
−
2
2.85
3
3.15 MHz
−
45
80
mW
−
22
40
mW
3.0
3.4
3.8
3.6
4.0
4.4
A
4.0
4.4
4.8
Open loop – Ipeak[1..0] = 11
4.6
5.0
5.4
DCLOAD
DCLINE
ACLOAD
Load Regulation
Line Regulation
Transient Load Response
IOUT from 300 mA to IOUTMAX
IOUT = 300 mA
2.3 V ≤ VIN ≤ 5.5 V
tr = ts = 100 ns
Load step 1.2 A (Note 10)
−
−0.2
−
%/A
−
0
−
%
−
±40
−
mV
D
Maximum Duty Cycle
−
100
−
%
tSTART
Turn on time
Time from EN transitions from Low to
High to 90% of Output Voltage
(DELAY[2..0] = 000b)
Time from EN transitions from Low to
High to VOUT = 1.127 V (Note 10)
−
80
100
ms
150
RDISDCDC DCDC Active Output Discharge
VOUT = 1.15 V
−
25
35
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. Devices that use non−standard supply voltages which do not conform to the intent I2C bus system levels must relate their input levels
to the VDD voltage to which the pull−up resistors RP are connected.
9. Refer to the Application Information section of this data sheet for more details.
10. Guaranteed by design and characterized.
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