SI4936ADY-T1-GE3 Просмотр технического описания (PDF) - Vishay Semiconductors
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SI4936ADY-T1-GE3 Datasheet PDF : 7 Pages
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Dual N-Channel 30-V (D-S) MOSFET
Si4936ADY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.036 at VGS = 10 V
0.053 at VGS = 4.5 V
ID (A)
5.9
4.9
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
S1 1
G1 2
S2 3
G2 4
SO-8
Top View
8 D1
7 D1
6 D2
5 D2
Ordering Information: Si4936ADY-T1-E3 (Lead (Pb)-free)
Si4936ADY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
D2
G1
G2
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
5.9
4.4
4.7
3.6
A
IDM
± 30
Continuous Source Current (Diode Conduction)a
IS
1.7
0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.3
1.1
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
50
90
32
Maximum
62.5
110
40
Unit
°C/W
Document Number: 71132
S09-0869-Rev. D, 18-May-09
www.vishay.com
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