NCP1117DTAT5(2004) Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
Список матч
NCP1117DTAT5
(Rev.:2004)
(Rev.:2004)
ON Semiconductor
NCP1117DTAT5 Datasheet PDF : 16 Pages
| |||
NCP1117, NCV1117
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Input Voltage (Note 1)
Output Short Circuit Duration (Notes 2 and 3)
Vin
20
V
−
Infinite
−
Power Dissipation and Thermal Characteristics
Case 318H (SOT−223)
Power Dissipation (Note 2)
Thermal Resistance, Junction−to−Ambient, Minimum Size Pad
Thermal Resistance, Junction−to−Case
Case 369A (DPAK)
Power Dissipation (Note 2)
Thermal Resistance, Junction−to−Ambient, Minimum Size Pad
Thermal Resistance, Junction−to−Case
Maximum Die Junction Temperature Range
Storage Temperature Range
Operating Ambient Temperature Range
NCP1117
NCV1117
PD
RqJA
RqJC
PD
RqJA
RqJC
TJ
Tstg
TA
Internally Limited
160
15
Internally Limited
67
6.0
−55 to 150
−65 to 150
0 to +125
−40 to +125
W
°C/W
°C/W
W
°C/W
°C/W
°C
°C
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL−STD−883, Method 3015.
Machine Model Method 200 V.
2. Internal thermal shutdown protection limits the die temperature to approximately 175°C. Proper heatsinking is required to prevent activation.
The
maximum
package
power
dissipation
is:
PD
+
TJ(max) *
RqJA
TA
3. The regulator output current must not exceed 1.0 A with Vin greater than 12 V.
http://onsemi.com
2
Share Link: