datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать

MC74VHC573DTR2G Просмотр технического описания (PDF) - ON Semiconductor

Номер в каталоге
Компоненты Описание
Список матч
MC74VHC573DTR2G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MC74VHC573DTR2G Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MC74VHC573
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ DC ELECTRICAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
Parameter
VCC
Test Conditions
V
TA = 25°C
Min
Typ
Max
TA = 40 to 85°C
Min
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ IOZ Maximum
Vin = VIL or VIH
5.5
ThreeState Leakage Vout = VCC or GND
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Current
± 0.25
± 2.5
μA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ICC Maximum Quiescent Vin = VCC or GND
5.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Supply Current
4.0
40.0
μA
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0ns)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLH,
tPHL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZL,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPZH
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPLZ,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tPHZ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tOSLH,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ tOSHL
Parameter
Maximum Propagation Delay,
LE to Q
Maximum Propagation Delay,
D to Q
Output Enable Time,
OE to Q
Output Disable Time,
OE to Q
Output to Output Skew
Test Conditions
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
VCC = 3.3 ± 0.3V
CL = 15pF
CL = 50pF
VCC = 5.0 ± 0.5V
CL = 15pF
CL = 50pF
VCC = 3.3 ± 0.3V
RL = 1kΩ
CL = 15pF
CL = 50pF
VCC = 5.0 ± 0.5V
RL = 1kΩ
CL = 15pF
CL = 50pF
VCC = 3.3 ± 0.3V
RL = 1kΩ
CL = 50pF
VCC = 5.0 ± 0.5V
RL = 1kΩ
CL = 50pF
VCC = 3.3 ± 0.3V
(Note 1)
CL = 50pF
VCC = 5.5 ± 0.5V
(Note 1)
CL = 50pF
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cin Maximum Input Capacitance
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Cout Maximum ThreeState
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Output Capacitance (Output
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ in HighImpedance State)
TA = 25°C
Min
Typ
Max
7.6
11.9
10.1
15.4
5.0
7.7
6.5
9.7
7.0
11.0
9.5
14.5
4.5
6.8
6.0
8.8
7.3
11.5
9.8
15.0
5.2
7.7
6.7
9.7
10.7
14.5
6.7
9.7
1.5
1.0
4
10
6
TA = 40 to 85°C
Min
Max Unit
1.0
14.0 ns
1.0
17.5
1.0
9.0
1.0
11.0
1.0
13.0 ns
1.0
16.5
1.0
8.0
1.0
10.0
1.0
13.5 ns
1.0
17.0
1.0
9.0
1.0
11.0
1.0
16.5 ns
1.0
11.0
1.5
ns
1.0
ns
10
pF
pF
Typical @ 25°C, VCC = 5.0V
CPD Power Dissipation Capacitance (Note 2)
29
pF
1. Parameter guaranteed by design. tOSLH = |tPLHm tPLHn|, tOSHL = |tPHLm tPHLn|.
2. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC / 8 (per latch). CPD is used to determine the
noload dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.
NOISE CHARACTERISTICS (Input tr = tf = 3.0ns, CL = 50 pF, VCC = 5.0V)
TA = 25°C
Symbol
Parameter
Typ
Max
Unit
VOLP Quiet Output Maximum Dynamic VOL
0.9
1.2
V
VOLV
Quiet Output Minimum Dynamic VOL
0.9
1.2
V
VIHD
Minimum High Level Dynamic Input Voltage
3.5
V
VILD
Maximum Low Level Dynamic Input Voltage
1.5
V
http://onsemi.com
4

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]