MC74HC251ADR2G Просмотр технического описания (PDF) - ON Semiconductor
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MC74HC251ADR2G Datasheet PDF : 9 Pages
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MC74HC251A
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
− 55 to
V
25°C
v 85°C v 125°C Unit
VIH
Minimum High−Level Input
Voltage
Vout = 0.1 V or VCC − 0.1 V
|Iout| v 20 mA
2.0
1.5
1.5
1.5
V
4.5
3.15
3.15
3.15
6.0
4.2
4.2
4.2
VIL
Maximum Low−Level Input
Voltage
Vout = 0.1 V or VCC − 0.1 V
|Iout| v 20 mA
2.0
0.3
0.3
0.3
V
4.5
0.9
0.9
0.9
6.0
1.2
1.2
1.2
VOH
Minimum High−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
2.0
1.9
1.9
1.9
V
4.5
4.4
4.4
4.4
6.0
5.9
5.9
5.9
Vin = VIH or VIL |Iout| v 4.0 mA 4.5
|Iout| v 5.2 mA 6.0
3.98
5.48
3.84
5.34
3.70
5.20
VOL
Maximum Low−Level Output
Voltage
Vin = VIH or VIL
|Iout| v 20 mA
2.0
0.1
0.1
0.1
V
4.5
0.1
0.1
0.1
6.0
0.1
0.1
0.1
Vin = VIH or VIL |Iout| v 4.0 mA 4.5
|Iout| v 5.2 mA 6.0
0.26
0.26
0.33
0.33
0.40
0.40
Iin
Maximum Input Leakage Current Vin = VCC or GND
6.0
± 0.1
± 1.0
± 1.0
mA
IOZ
Maximum Three−State
Leakage Current
Output in High−Impedance State
6.0
± 0.5
± 5.0
± 10
mA
Vin = VIL or VIH
Vout = VCC or GND
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0 mA
6.0
8
80
160
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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