BUK7610-55AL,118 Просмотр технического описания (PDF) - NXP Semiconductors.
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BUK7610-55AL,118 Datasheet PDF : 13 Pages
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NXP Semiconductors
BUK7610-55AL
N-channel TrenchMOS standard level FET
5
VGS(th)
(V)
4
3
2
1
max
typ
min
03aa32
0
−60
0
60
ID = 1 m A; VDS = VGS
120
180
Tj (°C)
10−1
ID
(A)
10−2
03aa35
min typ max
10−3
10−4
10−5
10−6
0
2
T j = 25 °C; VDS = VGS
4
6
VGS (V)
Fig 10. Gate-source threshold voltage as a function of Fig 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
18
RDSon
(mΩ)
14
003aaa730
2
a
1.5
03ne89
1
10
0.5
6
5
10
T j = 25 °C; ID = 25 A
15 VGS (V) 20
0
-60
0
60
a=
R DS o n
R DS o n(25°C )
120
180
Tj (°C)
Fig 12. Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7610-55AL_2
Product data sheet
Rev. 02 — 9 January 2008
© NXP B.V. 2008. All rights reserved.
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