DG9051(2005) Просмотр технического описания (PDF) - Vishay Semiconductors

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DG9051
(Rev.:2005)

Precision 8-Ch/Dual 4-Ch/Triple 2-Ch Low Voltage Analog Switches/Multiplexers

Vishay Semiconductors 

DG9051/9052/9053

Vishay Siliconix

New Product

SPECIFICATIONS (SINGLE SUPPLY 3 V)

Parameter

Analog Switch

Analog Signal Rangee

On-Resistance

rON Match Between Channelsg

Switch Off Leakage Currenta

Symbol

VANALOG

rON

∆rON

IS(off)

ID(off)

Channel On Leakage Currenta

Digital Control

Logic High Input Voltage

Logic Low Input Voltage

Input Currenta

Dynamic Characteristics

Transition Time

Break-Before-Make Time

ID(on)

VINH

VINL

IIN

tTRANS

tBBM

Enable Turn-On Time

Enable Turn-Off Time

Charge Injectione

Off-Isolatione,h

Crosstalke

Source Off Capacitancee

Drain Off Capacitancee

Drain On Capacitancee

Power Supply

Power Supply Current

tON(EN)

tOFF(EN)

Q

OIRR

XTALK

CS(off)

CD(off)

CD(on)

I+

Test Condition

Otherwise Unless Specified

V+ = 3 V, ±10 %, V– = 0 V

VEN = 0.4 V or 2.0 V

Limits

–40 to 85°C

Tempb Minc Typd Maxc

Unit

V+ = 2.7 V, VD = 1.5 V, IS = 0.1 mA

V+ = 2.7 V, VD = 1.5 V, IS = 0.1 mA

V+ = 3.3 V, VEN = 2.0 V

VS = 3 or 0.3 V, VD = 0.3 or 3 V

V+ = 3.3 V, VEN = 0 V

VS = 3 or 0.3 V, VD = 0.3 or 3 V

Full

0

3

V

Room

Room

130

12

Ω

Room –1

Full

–20

Room –1

Full

–20

Room –2

Full

–10

1

20

1

20

nA

2

10

VAX = VEN = 2.0 V or 0.4 V

Full

2.0

Full

Full

–1

V

0.4

1

µA

V+ = 2.7 V, VNO/NC = 1.5 V/0 V, 0 V/1.5 V

RL = 300 Ω, CL = 35 pF

Room

80

Room

25

V+ = 2.7 V, VX,Y, Z = 1.5 V, VS = 0 V,

Full

5

ns

RL = 300 Ω, CL = 35 pF

Room

90

Room

30

CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω

Room

9

pC

Room

–78

f = 1 MHz, RL = 50 Ω

Room

–83

dB

f = 1 MHz, VS = 0 V, VEN = 1.8 V

Room

5

f = 1 MHz, VD = 0 V, VEN = 1.8 V

Room

10

pF

f = 1 MHz, VD = 0 V, VEN = 0 V

Room

15

VEN = VA = 0 V or V+

Room

1.0

µA

Notes

a. Leakage parameters are guaranteed by worst case test condition and not subject to production test.

b. Room = 25°C, Full = as determined by the operating temperature suffix.

c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.

d. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.

e. Guaranteed by design, not subject to production test.

f. VIN = input voltage to perform proper function.

g. ∆rDON = rDON Max – rDON Min.

h. Worst case isolation occurs on Channel 4 due to proximity to the drain pin.

i. rDON flatness is measured as the difference between the minimum and maximum measured values across a defined Analog signal.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

www.vishay.com

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Document Number: 73410

S-52072-Rev. A, 10-Oct-05

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