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STD7NM60N

N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N

Electrical characteristics

Table 7. Switching times

Symbol

Parameter

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

Test conditions

VDD = 300 V, ID = 2.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 19)

Min. Typ. Max Unit

7

ns

10

ns

-

-

26

ns

12

ns

Table 8.

Symbol

Source drain diode

Parameter

Test conditions

Min. Typ. Max. Unit

ISD

ISDM (1)

VSD (2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 5 A, VGS = 0

5A

-

20 A

-

1.3 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 5 A, di/dt = 100 A/µs

VDD = 60 V (see Figure 22)

-

213

1.5

14

ns

nC

A

trr

Reverse recovery time

ISD = 5 A, di/dt = 100 A/µs

265

ns

Qrr Reverse recovery charge

VDD = 60 V, Tj = 150 °C

- 1.8

nC

IRRM Reverse recovery current

(see Figure 22)

14

A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 16472 Rev 4

5/17

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