STF7NM60N Просмотр технического описания (PDF) - STMicroelectronics

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STF7NM60N

N-channel 600 V, 5 A, 0.84 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET

STMicroelectronics 

STD7NM60N, STF7NM60N, STP7NM60N, STU7NM60N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (2)

PTOT

dv/dt (3)

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

Tstg Storage temperature

Tj Max. operating junction temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 5 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS

Value

TO-220, IPAK,

DPAK

TO-220FP

600

± 25

5

3

20

45

5 (1)

3 (1)

20(1)

20

15

Unit

V

V

A

A

A

W

V/ns

2500

V

- 55 to 150

°C

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

DPAK IPAK TO-220 TO-220FP

Rthj-case Thermal resistance junction-case max

2.78

Rthj-amb Thermal resistance junction-ambient max

100

Rthj-pcb Thermal resistance junction-pcb max

50

Tl

Maximum lead temperature for soldering

purpose

6.25

62.5

300

°C/W

°C/W

°C/W

°C

Table 4.

Symbol

Thermal data

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

2

A

Single pulse avalanche energy

EAS

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

119

mJ

Doc ID 16472 Rev 4

3/17

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