STF7NM60N(2018) Просмотр технического описания (PDF) - STMicroelectronics

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STF7NM60N
(Rev.:2018)

N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and IPAK packages

STMicroelectronics 

STD7NM60N, STF7NM60N, STU7NM60N

Datasheet

N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in

DPAK, TO-220FP and IPAK packages

D(2, TAB)

G(1)

S(3)

Features

Order code

VDS

RDS(on) max.

ID

STD7NM60N

STF7NM60N

600 V

0.9 Ω

5A

STU7NM60N

• 100% avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Package

DPAK

TO-220FP

IPAK

Applications

• Switching applications

AM01475v1_noZen

Description

These devices are N-channel Power MOSFETs developed using the second

generation of MDmesh™ technology. These revolutionary Power MOSFETs

associate a vertical structure to the company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. They are therefore suitable for the most

demanding high-efficiency converters.

Product status link

STD7NM60N

STF7NM60N

STU7NM60N

DS6523 - Rev 5 - September 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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