MG12150W-XN2MM Просмотр технического описания (PDF) - Littelfuse, Inc
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MG12150W-XN2MM Datasheet PDF : 6 Pages
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Power Module
1200V 150A IGBT Module
Figure 7: Diode Forward Characteristics
for Diode Inverter
300
240
180
120
Tj =125°C
60
Tj =25°C
00
0.6
1.2
1.8
2.4
VF˄V˅
Figure 9: Switching Energy vs. Forward Current
for Diode Inverter
20.0
16.0
RG=2.4Ω
VCE=600V
Tj =125°C
12.0
8.0
4.0
00
50 100 150 200 250 300
IF (A)
Figure 11: NTC Characteristics
100000
VIFG=E25=A15V
VCE=600V
TVj =125°C
10000
TVj =25°C
R
1000
TVj =125°C
Figure 8: Switching Energy vs. Gate Resistort
for Diode Inverter
20.0
16.0
IF=150A
VCE=600V
Tj =125°C
12.0
8.0
4.0
0 0 2 4 6 8 10 12 14 16
RG˄Ω˅
Figure 10: Transient Thermal Impedance of
Diode and IGBT Inverter
1
Diode
IGBT
0.1
0.01
0.001 0.01
0.1
1
10
Rectangular Pulse Duration (seconds)
100
0
20 40 60 80 100 120 140 160
TC˄°C˅
MG12150W-XN2MM
243
©2015 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:12/04/14
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