STTH200L04TV1(2006) Просмотр технического описания (PDF) - STMicroelectronics
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STTH200L04TV1 Datasheet PDF : 7 Pages
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Characteristics
STTH200L04TV1
Figure 7.
Reverse recovery softness factor
versus dIF/dt (typical values, per
diode)
SFACTOR
0.8
0.7
0.6
IF < 2 x IF(AV)
VR=200V
Tj=125°C
0.5
0.4
0.3
0.2
0.1
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
tRR
IRM
QRR
50
SFACTOR
Tj (°C)
75
IF=IF(AV)
VR=200V
Reference: Tj=125°C
100
125
Figure 9.
Transient peak forward voltage
versus dIF/dt (typical values, per
diode)
VFP (V)
6.0
5.5
IF=IF(AV)
Tj=125°C
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
Figure 10. Forward recovery time versus dIF/dt
(typical values, per diode)
tfr (ns)
1800
1600
1400
1200
1000
800
600
400
200
0
0 50
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
dIF /dt(A/µs)
100 150 200 250 300 350 400 450 500
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values, per diode)
C(pF)
10000
F=1MHz
VOSC=30mVRMS
Tj=25°C
1000
100
1
VR(V)
10
100
1000
4/7
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