2N5307_D74Z Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге

Компоненты Описание

Список матч

2N5307_D74Z

NPN General Purpose Amplifier

Fairchild Semiconductor 

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

Off Characteristics

BV(BR)CEO

BV(BR)CBO

BV(BR)EBO

ICBO

Collector-Emitter Breakdown Voltage *

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

IEBO

Reverse Base Current

On Characteristics *

IC = 10mA, IB = 0

IC = 0.1µA, IE = 0

IE = 0.1µA, IC = 0

VCB = 40V, IE = 0

VCB = 40V, IE = 0, TA = 100°C

VEB = 12V, IC = 0

hFE

DC Current Gain

VCE(sat) Collector-Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

Small Signal Characteristics

VCE = 5.0V, IC = 2.0mA

VCE = 5.0V, IC = 100mA

IC = 200mA, IB = 0.2mA

IC = 200mA, IB = 0.2mA

IC = 200mA,VCE = 5.0V

Cob

Output Capacitance

hfe

Small-Signal Current Gain

* Pulse Test: Pulse ≤ 300µs, Duty Cycle ≤ 2.0%

VCB = 10V, f = 1.0MHz

IC = 2.0mA, VCE = 5.0V,

f = 1.0kHz

IC = 2.0mA, VCE = 5.0V,

f = 10MHz

Min.

40

40

12

2,000

6,000

2,000

6.0

Typ. Max.

0.1

20

0.1

20,000

1.4

1.6

1.5

10

Units

V

V

V

µA

µA

µA

V

V

V

pF

Thermal Characteristics TA=25°C unless otherwise noted

Symbol

Parameter

PD

Total Device Dissipation

Derate above 25°C

RθJC

RθJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Max.

625

5.0

83.3

200

Units

mW

mW/°C

°C/W

°C/W

©2002 Fairchild Semiconductor Corporation

Rev. B, July 2002

Share Link: