CY7C1019DV33(2006) Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1019DV33 Datasheet PDF : 11 Pages
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CY7C1019DV33
Data Retention Characteristics (Over the Operating Range)
Parameter
VDR
ICCDR
tCDR [4]
tR[13]
Description
Conditions
VCC for Data Retention
Data Retention Current
VCC = VDR = 2.0V, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
Chip Deselect to Data Retention Time
Operation Recovery Time
Data Retention Waveform
DATA RETENTION MODE
VCC
3.0V
VDR > 2V
tCDR
CE
Min.
Max.
Unit
2.0
V
3
mA
0
ns
tRC
ns
3.0V
tR
Switching Waveforms
Read Cycle No. 1 (Address Transition Controlled)[14, 15]
tRRCC
ADDRESS
DATA OUT
tAA
tOHA
PREVIOUS DATA VALID
DATA VALID
Read Cycle No. 2 (OE Controlled)[15, 16]
ADDRESS
CE
OE
DATA OUT
VCC
SUPPLY
CURRENT
tRC
tACE
tDOE
tLZOE
HIGH IMPEDANCE
tLZCE
tPU
50%
DATA VALID
tHZOE
tHZCE
HIGH
IMPEDANCE
tPD
ICC
50%
ISB
Notes
13. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs.
14. Device is continuously selected. OE, CE = VIL.
15. WE is HIGH for Read cycle.
16. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05481 Rev. *D
Page 6 of 11
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