STI21N65M5 Просмотр технического описания (PDF) - STMicroelectronics

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STI21N65M5

N-channel 650 V, 0.150 Ω, 17 A MDmesh™ V Power MOSFET D²PAK, TO-220FP, TO-220, I²PAK, TO-247

STMicroelectronics 

Electrical characteristics

STB/F/I/P/W21N65M5

Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs

vs temperature

temperature

VGS(th)

(norm)

1.10

1.00

AM05500v1

ID =250 µA

RDS(on)

(norm)

2.1

1.9

1.7

ID= 8.5 A

VGS= 10 V

AM05501v1

1.5

0.90

1.3

1.1

0.80

0.9

0.70

-50 -25 0 25 50 75 100 125 TJ(°C)

0.7

0.5

-50 -25 0

25 50 75 100 125 TJ(°C)

Figure 16. Source-drain diode forward

characteristics

Figure 17. Normalized BVDSS vs temperature

VSD

(V) TJ=-50°C

1.0

0.9

AM05502v1

BVDSS

(norm)

1.07

1.05

ID= 1 mA

AM05499v1

0.8

0.7

TJ=150°C

0.6

TJ=25°C

1.03

1.01

0.99

0.97

0.5

0.95

0.4

0

10 20 30 40 50 ISD(A)

0.93

-50 -25 0 25 50 75 100 TJ(°C)

Figure 18. Switching losses vs gate resistance

(1)

E

(µJ)

160 ID=11A

VDD=400V

140 VGS=10V

120

Eon

AM05541v1

100

Eoff

80

60

40

20

0

0

10

20

30

40

1. Eon including reverse recovery of a SiC diode.

RG(Ω)

8/22

Doc ID 15427 Rev 4

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